Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/20838
Title: Development of broadband microwave amplifier for cognitive radio
Authors: Nang, Thiri Kham
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
Issue Date: 2009
Abstract: In this project, study of cognitive radio and design of broadband microwave amplifier intended for the receiver unit of the cognitive radio is carried out. Traveling wave distributed amplifier topology is chosen for the design as it has the main advantage of having very wide bandwidth and inherent circuit stability characteristics. The traveling wave distributed amplifier would be able to provide a nearly flat forward gain around +10dB from 2GHz to 6GHz. Heterojunction bipolar transistor (HBT) is chosen as active device for the amplifier design as it has great performance in high frequency region. The transistor technology used in this project is: H02U-41 technology which is obtained from manufacturer, WIN Semiconductor Corp. The traveling wave distributed amplifier is designed based on calculation using the transistor small signal model parameters. And all the design simulation is done with the help of Agilent Advanced Design System (ADS) software and includes device characterization: biasing test, S-parameters test, extracting small signal model parameters and matching circuit design.
URI: http://hdl.handle.net/10356/20838
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Student Reports (FYP/IA/PA/PI)

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