Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/2754
Title: Fabrication and characterisation of microelectronic devices, circuits and systems III
Authors: Siek, Liter.
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
Issue Date: 2001
Abstract: We present in this report the characterization of deep submicrometer (the device channel length ranges from 0.25um to 1.0um) lightly-doped drain (LDD) pMOSFETs operating in a Bi-MOS structure. The Bi-MOS structure is essentially a device operating with its sourcebody junction forward biased. Consequently, there is an additional current component, the lateral bipolar current, flwoing beneath the principle MOS current.
URI: http://hdl.handle.net/10356/2754
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Research Reports (Staff & Graduate Students)

Files in This Item:
File Description SizeFormat 
EEE-RESEARCH-REPORT_166.pdf
  Restricted Access
2.71 MBAdobe PDFView/Open

Page view(s) 50

336
checked on Sep 27, 2020

Download(s) 10

11
checked on Sep 27, 2020

Google ScholarTM

Check

Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.