Please use this identifier to cite or link to this item:
Full metadata record
DC FieldValueLanguage
dc.contributor.authorChan, Yuen Chuenen_US
dc.contributor.authorOoi, Boon Siewen_US
dc.contributor.authorLam, Yee Loyen_US
dc.description.abstractIn this project, a novel QWI technique, based on the impurity free vacancies induced disordering (IFVD) technique, has been developed. This technique uses undoped and Er-doped sol-get SiO2 to achieve selective intermixing across a GaAs/AiGaAs laser structure.en_US
dc.rightsNanyang Technological Universityen_US
dc.subjectDRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
dc.titleMonolithic integration of GaAs/A1GaAS photonic devices using quantum well intermixingen_US
dc.typeResearch Reporten_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.description.reportnumberRG 47/96
item.fulltextWith Fulltext-
Appears in Collections:EEE Research Reports (Staff & Graduate Students)
Files in This Item:
File Description SizeFormat 
  Restricted Access
865.47 kBAdobe PDFView/Open

Page view(s) 50

Updated on Jan 21, 2021


Updated on Jan 21, 2021

Google ScholarTM


Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.