Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/2777
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dc.contributor.authorChan, Yuen Chuenen_US
dc.contributor.authorOoi, Boon Siewen_US
dc.contributor.authorLam, Yee Loyen_US
dc.date.accessioned2008-09-17T09:14:34Z
dc.date.available2008-09-17T09:14:34Z
dc.date.copyright2001en_US
dc.date.issued2001
dc.identifier.urihttp://hdl.handle.net/10356/2777
dc.description.abstractIn this project, a novel QWI technique, based on the impurity free vacancies induced disordering (IFVD) technique, has been developed. This technique uses undoped and Er-doped sol-get SiO2 to achieve selective intermixing across a GaAs/AiGaAs laser structure.en_US
dc.rightsNanyang Technological Universityen_US
dc.subjectDRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
dc.titleMonolithic integration of GaAs/A1GaAS photonic devices using quantum well intermixingen_US
dc.typeResearch Reporten_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.description.reportnumberRG 47/96
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Appears in Collections:EEE Research Reports (Staff & Graduate Students)
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