Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/2822
Title: Monolithic integration of heterojunction bipolar transistors and high electron mobility transistors
Authors: Radhakrishnan, K.
Ng, Geok Ing.
Yoon, Soon Fatt.
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Issue Date: 2002
Abstract: In this investigation, studies were undertaken for the possibility of monolithic integration of HEMTs and HBTs.
URI: http://hdl.handle.net/10356/2822
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Research Reports (Staff & Graduate Students)

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