Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/2826
Title: Characterization of compound semiconductor for quantum well infrared photodetectors
Authors: Zhang, Dao Hua
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Issue Date: 2002
Abstract: In this project, quaternary GaInAsP materials grown on GaAs and InP substrates are systematically characterized. GaInAs/A1GaAs and GaInAsP/InP multuple quantum well structures grown on GaAs and on InP substrates, respectively, are investigated. Quantum well infrared photodector devices made up of these two kinds are fabricated.
URI: http://hdl.handle.net/10356/2826
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Research Reports (Staff & Graduate Students)

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