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https://hdl.handle.net/10356/2826
Title: | Characterization of compound semiconductor for quantum well infrared photodetectors | Authors: | Zhang, Dao Hua | Keywords: | DRNTU::Engineering::Electrical and electronic engineering::Semiconductors | Issue Date: | 2002 | Abstract: | In this project, quaternary GaInAsP materials grown on GaAs and InP substrates are systematically characterized. GaInAs/A1GaAs and GaInAsP/InP multuple quantum well structures grown on GaAs and on InP substrates, respectively, are investigated. Quantum well infrared photodector devices made up of these two kinds are fabricated. | URI: | http://hdl.handle.net/10356/2826 | Schools: | School of Electrical and Electronic Engineering | Rights: | Nanyang Technological University | Fulltext Permission: | restricted | Fulltext Availability: | With Fulltext |
Appears in Collections: | EEE Research Reports (Staff & Graduate Students) |
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File | Description | Size | Format | |
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EEE-RESEARCH-REPORT_230.pdf Restricted Access | 2.44 MB | Adobe PDF | View/Open |
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