Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/2834
Title: Post stress reliability in submicron MOSFET devices
Authors: Chen, Tupei.
Tse, Man Siu.
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Issue Date: 2002
Abstract: In this project, we have conducted a systematic investigation of post-breakdown conduction and its instability in ultrathin SiO2 films as well as various studies of interface degradation, charge trapping and oxide barrier height change in deep submicron MOS devices with ultrathin gate oxide caused by electrical stress.
URI: http://hdl.handle.net/10356/2834
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Research Reports (Staff & Graduate Students)

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