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https://hdl.handle.net/10356/2834
Title: | Post stress reliability in submicron MOSFET devices | Authors: | Chen, Tupei. Tse, Man Siu. |
Keywords: | DRNTU::Engineering::Electrical and electronic engineering::Semiconductors | Issue Date: | 2002 | Abstract: | In this project, we have conducted a systematic investigation of post-breakdown conduction and its instability in ultrathin SiO2 films as well as various studies of interface degradation, charge trapping and oxide barrier height change in deep submicron MOS devices with ultrathin gate oxide caused by electrical stress. | URI: | http://hdl.handle.net/10356/2834 | Schools: | School of Electrical and Electronic Engineering | Rights: | Nanyang Technological University | Fulltext Permission: | restricted | Fulltext Availability: | With Fulltext |
Appears in Collections: | EEE Research Reports (Staff & Graduate Students) |
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File | Description | Size | Format | |
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EEE-RESEARCH-REPORT_238.pdf Restricted Access | 1.11 MB | Adobe PDF | View/Open |
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