Please use this identifier to cite or link to this item:
https://hdl.handle.net/10356/2866
Title: | Fabrication and characterisation of microelectronics devices, circuits and system II | Authors: | Zhang, Dao Hua | Keywords: | DRNTU::Engineering::Electrical and electronic engineering::Microelectronics | Issue Date: | 2003 | Abstract: | The quantum well intermixing (QWI) technique using pulsed-photoabsorption-induced disordering (P-PAID) in the InGaAs/InGaAsP material system has been investigated. | URI: | http://hdl.handle.net/10356/2866 | Schools: | School of Electrical and Electronic Engineering | Rights: | Nanyang Technological University | Fulltext Permission: | restricted | Fulltext Availability: | With Fulltext |
Appears in Collections: | EEE Research Reports (Staff & Graduate Students) |
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File | Description | Size | Format | |
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EEE-RESEARCH-REPORT_267.pdf Restricted Access | 1.89 MB | Adobe PDF | View/Open |
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