Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/2868
Title: RF modelling of semiconductor devices
Authors: Ma, Jian-Guo
Yeo, Kiat Seng
Do, Manh Anh
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Issue Date: 2003
Abstract: This report focuses on the approaches to characterize the deep submicron-meter MOSFETs operating both in DC and in high frequency region with different dimensions.
URI: http://hdl.handle.net/10356/2868
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Research Reports (Staff & Graduate Students)

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