Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/2874
Title: Epitaxy and X-ray lithography of silicon germanium semiconductors
Authors: Wong, Terence Kin Shun.
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Issue Date: 2003
Abstract: Three series of silicon germanium (SiGe) films totaling fourty seven wafers had been grown by chemical vapor deposition (CVD) technique on Si(100) and Si(111) substrates. The first series (series 1) consists of nominally undoped SiGe single layers with Ge content of 10 at.% and 30 at.% . The second series (series 2) consists of undoped as well as boron and phosphorus doped SiGe single layers with Ge content of 10, 20 and 30 at.%. The third series (series 3) are SiGe heterostructures and the multilayer stacks include single SiGe quantum well, coupled multiple quantum wells and modulation doped high mobility SiGe layers.
URI: http://hdl.handle.net/10356/2874
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Research Reports (Staff & Graduate Students)

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