Please use this identifier to cite or link to this item:
Title: Design and fabrication of insulated gate bipolar transistor (IGBT) using wafer bonding technology
Authors: Tan, Cher Ming.
Tse, Man Siu.
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Power electronics
Issue Date: 2003
Abstract: With the enhanced performance of the novel Lateral IGBT can be proved through simulation, its fabrication remains a challenge. In this project, we investigated many different fabrication methodologies, and wafer bonding is found to be only viable choice.
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Research Reports (Staff & Graduate Students)

Files in This Item:
File Description SizeFormat 
  Restricted Access
5.68 MBAdobe PDFView/Open

Page view(s) 20

Updated on Apr 15, 2021


Updated on Apr 15, 2021

Google ScholarTM


Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.