Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/2887
Title: Design and fabrication of insulated gate bipolar transistor (IGBT) using wafer bonding technology
Authors: Tan, Cher Ming.
Tse, Man Siu.
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Power electronics
Issue Date: 2003
Abstract: With the enhanced performance of the novel Lateral IGBT can be proved through simulation, its fabrication remains a challenge. In this project, we investigated many different fabrication methodologies, and wafer bonding is found to be only viable choice.
URI: http://hdl.handle.net/10356/2887
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Research Reports (Staff & Graduate Students)

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