Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/2936
Title: Development of thin film structures for heterojunction bipolar transistors (HBTs)
Authors: Radhakrishnan, K.
Yoon, Soon Fatt.
Tse, Man Siu.
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
Issue Date: 1997
Abstract: In this study, MBE growth optimization for producing excellent device quality heterostructures has been reported, starting from single GaAs epi-layer. Based on this experience, several high electron mobility transistor devices have been fabricated and characterized.
URI: http://hdl.handle.net/10356/2936
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Research Reports (Staff & Graduate Students)

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