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|Title:||Development of thin film structures for heterojunction bipolar transistors (HBTs)||Authors:||Radhakrishnan, K.
Yoon, Soon Fatt.
Tse, Man Siu.
|Keywords:||DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits||Issue Date:||1997||Abstract:||In this study, MBE growth optimization for producing excellent device quality heterostructures has been reported, starting from single GaAs epi-layer. Based on this experience, several high electron mobility transistor devices have been fabricated and characterized.||URI:||http://hdl.handle.net/10356/2936||Rights:||Nanyang Technological University||Fulltext Permission:||restricted||Fulltext Availability:||With Fulltext|
|Appears in Collections:||EEE Research Reports (Staff & Graduate Students)|
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