Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/2988
Title: Investigation of ultra high-speed heterojunction bipolar transistors fabricated in molecular beam epitaxy technology
Authors: Yoon, Soon Fatt.
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Electronic packaging
Issue Date: 1998
Abstract: The objective is to develop a baseline fabrication technology for GaAs-based Heterojunction Bipolar Transistor (HBTs) based on our existing clean room facilities.
URI: http://hdl.handle.net/10356/2988
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Research Reports (Staff & Graduate Students)

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