Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/3038
Title: Development of electron beam lithography process for the design and fabrication of sub-micron GaAs-based RF devices
Authors: Yoon, Soon Fatt.
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Electronic packaging
Issue Date: 2000
Abstract: This report presents the device fabrication and characterisation of the InxGa1-xP/In0.20Ga0.80As HEMT.
URI: http://hdl.handle.net/10356/3038
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Research Reports (Staff & Graduate Students)

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