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Title: Design and fabrication of heterojunction bipolar transistors (HBT)
Authors: Pan, Yang
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Electric apparatus and materials
Issue Date: 2000
Abstract: This thesis presents the development of an AlGaAs/GaAs-based heterojunction bipolar transistor technology for microwave and power applications. The HBTs were fabricated on MOCVD grown epitaxial layers which consist of an InyGai.yAs emitter contact layer, a GaAs emitter cap layer, an aluminum composition graded AlGaAs emitter layer, a GaAs uniform base layer, a GaAs collector and a sub-collector layer. The base ohmic contact pattern is defined by both self-aligned and re-aligned approach for comparison purpose.
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Theses

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