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|Title:||Characterization of InP based high electron mobility transistor structures grown by solid source MBE||Authors:||Too, Patrick Heng Kwee.||Keywords:||DRNTU::Engineering::Electrical and electronic engineering::Electric apparatus and materials||Issue Date:||2000||Abstract:||This thesis presents the growth and characterisation of InP/InxGai_xAs/InP HEMTs. Electrical, optical, and structural characterisations of this material system are reported and discussed in detail.||URI:||http://hdl.handle.net/10356/3115||Rights:||Nanyang Technological University||Fulltext Permission:||restricted||Fulltext Availability:||With Fulltext|
|Appears in Collections:||EEE Theses|
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