Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/3115
Title: Characterization of InP based high electron mobility transistor structures grown by solid source MBE
Authors: Too, Patrick Heng Kwee.
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Electric apparatus and materials
Issue Date: 2000
Abstract: This thesis presents the growth and characterisation of InP/InxGai_xAs/InP HEMTs. Electrical, optical, and structural characterisations of this material system are reported and discussed in detail.
URI: http://hdl.handle.net/10356/3115
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Theses

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