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https://hdl.handle.net/10356/3115| Title: | Characterization of InP based high electron mobility transistor structures grown by solid source MBE | Authors: | Too, Patrick Heng Kwee. | Keywords: | DRNTU::Engineering::Electrical and electronic engineering::Electric apparatus and materials | Issue Date: | 2000 | Abstract: | This thesis presents the growth and characterisation of InP/InxGai_xAs/InP HEMTs. Electrical, optical, and structural characterisations of this material system are reported and discussed in detail. | URI: | http://hdl.handle.net/10356/3115 | Schools: | School of Electrical and Electronic Engineering | Rights: | Nanyang Technological University | Fulltext Permission: | restricted | Fulltext Availability: | With Fulltext |
| Appears in Collections: | EEE Theses |
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| File | Description | Size | Format | |
|---|---|---|---|---|
| EEE-THESES_1009.pdf Restricted Access | 13.52 MB | Adobe PDF | View/Open |
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