Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/3135
Title: Junction depth & defect characterization with the use of EBIC
Authors: Phua, Poh Chin.
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Issue Date: 2002
Abstract: There are two objectives to be achieved in this work. Firstly, it is desirable to determine a new method of reconstructing the charge collection probability so as to extract the junction depth of the device. Secondly, it is also desirable to extract the defect location using the perpendicular p-n junction geometry.
URI: http://hdl.handle.net/10356/3135
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Theses

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