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Title: Wideband CDMA power amplifier
Authors: Sathish Shanbhag Kota
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
Issue Date: 2000
Abstract: This report discusses the design and development of High Power (10W) RF amplifier for emerging Wide-band CDMA (WCDMA) applications. Our design is based on the latest Laterally Diffused Metal Oxide Semiconductor (LDMOS) transistor MRF 282, from Motorola. In this report, we discuss the device selection criteria, the actual design of the amplifier circuit and it's simulation using HP EESof LIBRA™. We also discuss the fabrication techniques for the amplifier. Following this, we discuss the test setup, procedures and the results obtained from our amplifier. We finally conclude our discussion with some recommendations for future work in this field.
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Theses

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