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https://hdl.handle.net/10356/3209| Title: | Experimental modeling of body effects in MOS devices | Authors: | Seah, Lionel Siau Hing. | Keywords: | DRNTU::Engineering::Electrical and electronic engineering::Integrated circuits | Issue Date: | 2000 | Abstract: | Explored the body effects of deep submicron Lightly-Doped-Drain (LDD) pMOSFETs operating in a Bi-MOS hybrid-mode environment. Developed an experimentally based analytical body current model. | URI: | http://hdl.handle.net/10356/3209 | Schools: | School of Electrical and Electronic Engineering | Rights: | Nanyang Technological University | Fulltext Permission: | restricted | Fulltext Availability: | With Fulltext |
| Appears in Collections: | EEE Theses |
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| File | Description | Size | Format | |
|---|---|---|---|---|
| EEE-THESES_1094.pdf Restricted Access | 1.22 MB | Adobe PDF | View/Open |
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