Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/3233
Title: Development of NTU 1.2(m)m CMOS process technology
Authors: Shen, Hongliang.
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
Issue Date: 2003
Abstract: This project aims to develop and optimize the baseline 1.2um Twin-Well CMOS technology which will be extended to 1.2um SiGe BiCMOS technology in the future Processes such as Punch-through implant, Sidewall spacer and Halo Implant were studied to control the short channel effect.
URI: http://hdl.handle.net/10356/3233
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Theses

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