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https://hdl.handle.net/10356/3233| Title: | Development of NTU 1.2(m)m CMOS process technology | Authors: | Shen, Hongliang. | Keywords: | DRNTU::Engineering::Electrical and electronic engineering::Microelectronics | Issue Date: | 2003 | Abstract: | This project aims to develop and optimize the baseline 1.2um Twin-Well CMOS technology which will be extended to 1.2um SiGe BiCMOS technology in the future Processes such as Punch-through implant, Sidewall spacer and Halo Implant were studied to control the short channel effect. | URI: | http://hdl.handle.net/10356/3233 | Schools: | School of Electrical and Electronic Engineering | Rights: | Nanyang Technological University | Fulltext Permission: | restricted | Fulltext Availability: | With Fulltext |
| Appears in Collections: | EEE Theses |
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| File | Description | Size | Format | |
|---|---|---|---|---|
| EEE-THESES_1115.pdf Restricted Access | 10.82 MB | Adobe PDF | View/Open |
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