Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/3278
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dc.contributor.authorSong, Yi Fei.en_US
dc.date.accessioned2008-09-17T09:26:15Z-
dc.date.available2008-09-17T09:26:15Z-
dc.date.copyright2005en_US
dc.date.issued2005-
dc.identifier.urihttp://hdl.handle.net/10356/3278-
dc.description.abstractThis project is on low dimensional semiconductor structures MOCVD growth and their characterizations, mainly focused on multiple quantum wells structure growth by MOCVD. Samples were characterized by using high resolution X-ray diffractions (XRD) and photoluminescence (PL). In this dissertation, properties of low dimensional semiconductor quantum well structures have been discussed. The principle of MOCVD growth in terms of its growth process, mechanism, the starting precursors and growth system has been described. Experiment setup and the application of XRD and PL used in this project have been introduced.en_US
dc.rightsNanyang Technological Universityen_US
dc.subjectDRNTU::Engineering::Electrical and electronic engineering::Semiconductors-
dc.titleLow dimensional semiconductor structures MOCVD growth and their characterizationsen_US
dc.typeThesisen_US
dc.contributor.supervisorTang, Xiaohongen_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.description.degreeMaster of Science (Photonics)en_US
item.grantfulltextrestricted-
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