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|Title:||Modelling and characterisation of heterostructure devices for MMIC application||Authors:||Subrata Halder.||Keywords:||DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits||Issue Date:||2001||Abstract:||For development of MMIC amplifier using GaAs HEMT and HBT devices developed in-house, it is essential to select devices of appropriate size for best power performance. The overall objective of this has been dc and microwave characterization of HEMT and HBT devices.||URI:||http://hdl.handle.net/10356/3290||Rights:||Nanyang Technological University||Fulltext Permission:||restricted||Fulltext Availability:||With Fulltext|
|Appears in Collections:||EEE Theses|
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