Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/3299
Title: Studies of wafer level electromigration test for ULSI
Authors: Sum, Heng Keong.
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
Issue Date: 2003
Abstract: Microelectronic test structures are used for wide variety of tasks which include equipment characterizations, reliability evaluations, defect monitoring, transistor parameter extraction and process verification and development. Similarly, test structures are used in electromigration evaluation. In this dissertation, the various common test structures used in electromigration test were reviewed. The structures’ application, advantages and disadvantages were discussed.
URI: http://hdl.handle.net/10356/3299
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Theses

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