Please use this identifier to cite or link to this item:
|Title:||Studies of wafer level electromigration test for ULSI||Authors:||Sum, Heng Keong.||Keywords:||DRNTU::Engineering::Electrical and electronic engineering::Microelectronics||Issue Date:||2003||Abstract:||Microelectronic test structures are used for wide variety of tasks which include equipment characterizations, reliability evaluations, defect monitoring, transistor parameter extraction and process verification and development. Similarly, test structures are used in electromigration evaluation. In this dissertation, the various common test structures used in electromigration test were reviewed. The structures’ application, advantages and disadvantages were discussed.||URI:||http://hdl.handle.net/10356/3299||Rights:||Nanyang Technological University||Fulltext Permission:||restricted||Fulltext Availability:||With Fulltext|
|Appears in Collections:||EEE Theses|
Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.