Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/3326
Title: Electromigration reliability of copper interconnect in submicron microelectronics application
Authors: Ang, Kian Ann
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
Issue Date: 2005
Abstract: In this dissertation, the effects of temperature and interconnect properties on copper metallization electromigration are discussed. Accelerated Life Testing is used to obtain performance data on devices at a quicker rate.
URI: http://hdl.handle.net/10356/3326
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Theses

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