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|Title:||Electromigration reliability of copper interconnect in submicron microelectronics application||Authors:||Ang, Kian Ann||Keywords:||DRNTU::Engineering::Electrical and electronic engineering::Microelectronics||Issue Date:||2005||Abstract:||In this dissertation, the effects of temperature and interconnect properties on copper metallization electromigration are discussed. Accelerated Life Testing is used to obtain performance data on devices at a quicker rate.||URI:||http://hdl.handle.net/10356/3326||Rights:||Nanyang Technological University||Fulltext Permission:||restricted||Fulltext Availability:||With Fulltext|
|Appears in Collections:||EEE Theses|
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