Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/3328
Title: Fabrication and characterisation of Silicon-Germanium Schottky diode
Authors: Tan, Oscar Aik Poh.
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Issue Date: 2003
Abstract: In this project, both the silicon and silicon germanium schottky barrier diode were fabricated and studied. Pt, Ti and W metal were investigated as schottky materials. Pt/n-Si, Ti/n-Si, W/n-Si, Pt/p-Si, Ti/p-Si and W/p-Si schottky diodes were fabricated and found to give good quality schottky diode performance with suitable fine-tuning of the fabrication process to reduce over-alloying.
URI: http://hdl.handle.net/10356/3328
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Theses

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