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https://hdl.handle.net/10356/3328| Title: | Fabrication and characterisation of Silicon-Germanium Schottky diode | Authors: | Tan, Oscar Aik Poh. | Keywords: | DRNTU::Engineering::Electrical and electronic engineering::Semiconductors | Issue Date: | 2003 | Abstract: | In this project, both the silicon and silicon germanium schottky barrier diode were fabricated and studied. Pt, Ti and W metal were investigated as schottky materials. Pt/n-Si, Ti/n-Si, W/n-Si, Pt/p-Si, Ti/p-Si and W/p-Si schottky diodes were fabricated and found to give good quality schottky diode performance with suitable fine-tuning of the fabrication process to reduce over-alloying. | URI: | http://hdl.handle.net/10356/3328 | Schools: | School of Electrical and Electronic Engineering | Rights: | Nanyang Technological University | Fulltext Permission: | restricted | Fulltext Availability: | With Fulltext |
| Appears in Collections: | EEE Theses |
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| File | Description | Size | Format | |
|---|---|---|---|---|
| EEE-THESES_1200.pdf Restricted Access | 9.11 MB | Adobe PDF | View/Open |
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