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|Title:||Fabrication and characterisation of Silicon-Germanium Schottky diode||Authors:||Tan, Oscar Aik Poh.||Keywords:||DRNTU::Engineering::Electrical and electronic engineering::Semiconductors||Issue Date:||2003||Abstract:||In this project, both the silicon and silicon germanium schottky barrier diode were fabricated and studied. Pt, Ti and W metal were investigated as schottky materials. Pt/n-Si, Ti/n-Si, W/n-Si, Pt/p-Si, Ti/p-Si and W/p-Si schottky diodes were fabricated and found to give good quality schottky diode performance with suitable fine-tuning of the fabrication process to reduce over-alloying.||URI:||http://hdl.handle.net/10356/3328||Rights:||Nanyang Technological University||Fulltext Permission:||restricted||Fulltext Availability:||With Fulltext|
|Appears in Collections:||EEE Theses|
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