Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/3328
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dc.contributor.authorTan, Oscar Aik Poh.en_US
dc.date.accessioned2008-09-17T09:27:30Z-
dc.date.available2008-09-17T09:27:30Z-
dc.date.copyright2003en_US
dc.date.issued2003-
dc.identifier.urihttp://hdl.handle.net/10356/3328-
dc.description.abstractIn this project, both the silicon and silicon germanium schottky barrier diode were fabricated and studied. Pt, Ti and W metal were investigated as schottky materials. Pt/n-Si, Ti/n-Si, W/n-Si, Pt/p-Si, Ti/p-Si and W/p-Si schottky diodes were fabricated and found to give good quality schottky diode performance with suitable fine-tuning of the fabrication process to reduce over-alloying.en_US
dc.rightsNanyang Technological Universityen_US
dc.subjectDRNTU::Engineering::Electrical and electronic engineering::Semiconductors-
dc.titleFabrication and characterisation of Silicon-Germanium Schottky diodeen_US
dc.typeThesisen_US
dc.contributor.supervisorTse, Man Siuen_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.description.degreeMaster of Science (Microelectronics)en_US
item.grantfulltextrestricted-
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