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|Title:||Design of semiconductor high-power laser diodes||Authors:||Tan, Guan Seng.||Keywords:||DRNTU::Engineering::Electrical and electronic engineering::Semiconductors||Issue Date:||2004||Abstract:||High power semiconductor laser diode structure for lasing at 808nm wavelength has been designed. Its performance such as threshold current, slope efficiency, CW power output has been simulated to optimize the device structure.||URI:||http://hdl.handle.net/10356/3356||Rights:||Nanyang Technological University||Fulltext Permission:||restricted||Fulltext Availability:||With Fulltext|
|Appears in Collections:||EEE Theses|
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