Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/3356
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dc.contributor.authorTan, Guan Seng.en_US
dc.date.accessioned2008-09-17T09:28:10Z-
dc.date.available2008-09-17T09:28:10Z-
dc.date.copyright2004en_US
dc.date.issued2004-
dc.identifier.urihttp://hdl.handle.net/10356/3356-
dc.description.abstractHigh power semiconductor laser diode structure for lasing at 808nm wavelength has been designed. Its performance such as threshold current, slope efficiency, CW power output has been simulated to optimize the device structure.en_US
dc.rightsNanyang Technological Universityen_US
dc.subjectDRNTU::Engineering::Electrical and electronic engineering::Semiconductors-
dc.titleDesign of semiconductor high-power laser diodesen_US
dc.typeThesisen_US
dc.contributor.supervisorTang, Xiaohongen_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.description.degreeMaster of Science (Photonics)en_US
item.grantfulltextrestricted-
item.fulltextWith Fulltext-
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