Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/3362
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dc.contributor.authorTan, Hai Peng.en_US
dc.date.accessioned2008-09-17T09:28:18Z-
dc.date.available2008-09-17T09:28:18Z-
dc.date.copyright2000en_US
dc.date.issued2000-
dc.identifier.urihttp://hdl.handle.net/10356/3362-
dc.description.abstractThe purpose of this project is to introduce an IC inductor of high quality factor performance on silicon substrate using conventional CMOS or BiCMOS technologies. The thesis conducts a comprehensive study on the conventional rectangular spiral inductors for different numbers of turns using both the experimental measurements and numerical simulations. Several numbers of spiral inductors were simulated with different metal widths. An investigation on the widths to maximize the quality factor of an inductor was performed.en_US
dc.rightsNanyang Technological Universityen_US
dc.subjectDRNTU::Engineering::Electrical and electronic engineering::Electric apparatus and materials-
dc.titleDesign of high quality factor inductor on siliconen_US
dc.typeThesisen_US
dc.contributor.supervisorYeo, Kiat Sengen_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.description.degreeMaster of Engineeringen_US
dc.contributor.supervisor2Ma, Jian-Guoen_US
item.grantfulltextrestricted-
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