Experimental and theoretical studies of negative bias temperature instability in ultra-thin gate dielectrics.
Tan, Shyue Seng.
Date of Issue2005
School of Electrical and Electronic Engineering
It has been the intent of this work to investigate negative bias temperature instability of pMOSFET with ultra-thin gate dielectrics both theoretically and experimentally. Through experimental study, a comprehensive and quantitative study on the influence of nitrogen at the Si/SiOxNy interface on NBTI has been presented and several features regarding the nitrogen-enhanced are unveiled. Based on the findings established from experimental works, an atomic model of NBTI is developed using first-principles calculations. In the model, the possible origin of NBTI in both SiO2 and nitrided oxides are discussed.
DRNTU::Engineering::Electrical and electronic engineering::Electric apparatus and materials
Nanyang Technological University