Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/3384
Title: Experimental and theoretical studies of negative bias temperature instability in ultra-thin gate dielectrics
Authors: Tan, Shyue Seng
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Electric apparatus and materials
Issue Date: 2005
Source: Tan, S. S. (2005). Experimental and theoretical studies of negative bias temperature instability in ultra-thin gate dielectrics. Doctoral thesis, Nanyang Technological University, Singapore.
Abstract: It has been the intent of this work to investigate negative bias temperature instability of pMOSFET with ultra-thin gate dielectrics both theoretically and experimentally. Through experimental study, a comprehensive and quantitative study on the influence of nitrogen at the Si/SiOxNy interface on NBTI has been presented and several features regarding the nitrogen-enhanced are unveiled. Based on the findings established from experimental works, an atomic model of NBTI is developed using first-principles calculations. In the model, the possible origin of NBTI in both SiO2 and nitrided oxides are discussed.
URI: https://hdl.handle.net/10356/3384
DOI: 10.32657/10356/3384
Rights: Nanyang Technological University
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Theses

Files in This Item:
File Description SizeFormat 
EEE-THESES_1251.pdf17.02 MBAdobe PDFThumbnail
View/Open

Page view(s) 20

498
Updated on Feb 27, 2021

Download(s) 20

188
Updated on Feb 27, 2021

Google ScholarTM

Check

Altmetric


Plumx

Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.