Experimental and theoretical studies of negative bias temperature instability in ultra-thin gate dielectrics

Abstract

It has been the intent of this work to investigate negative bias temperature instability of pMOSFET with ultra-thin gate dielectrics both theoretically and experimentally. Through experimental study, a comprehensive and quantitative study on the influence of nitrogen at the Si/SiOxNy interface on NBTI has been presented and several features regarding the nitrogen-enhanced are unveiled. Based on the findings established from experimental works, an atomic model of NBTI is developed using first-principles calculations. In the model, the possible origin of NBTI in both SiO2 and nitrided oxides are discussed.