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https://hdl.handle.net/10356/3384
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DC Field | Value | Language |
---|---|---|
dc.contributor.author | Tan, Shyue Seng | en |
dc.date.accessioned | 2008-09-17T09:28:59Z | en |
dc.date.available | 2008-09-17T09:28:59Z | en |
dc.date.copyright | 2005 | en |
dc.date.issued | 2005 | en |
dc.identifier.citation | Tan, S. S. (2005). Experimental and theoretical studies of negative bias temperature instability in ultra-thin gate dielectrics. Doctoral thesis, Nanyang Technological University, Singapore. | en |
dc.identifier.uri | https://hdl.handle.net/10356/3384 | en |
dc.description.abstract | It has been the intent of this work to investigate negative bias temperature instability of pMOSFET with ultra-thin gate dielectrics both theoretically and experimentally. Through experimental study, a comprehensive and quantitative study on the influence of nitrogen at the Si/SiOxNy interface on NBTI has been presented and several features regarding the nitrogen-enhanced are unveiled. Based on the findings established from experimental works, an atomic model of NBTI is developed using first-principles calculations. In the model, the possible origin of NBTI in both SiO2 and nitrided oxides are discussed. | en |
dc.rights | Nanyang Technological University | en |
dc.subject | DRNTU::Engineering::Electrical and electronic engineering::Electric apparatus and materials | en |
dc.title | Experimental and theoretical studies of negative bias temperature instability in ultra-thin gate dielectrics | en |
dc.type | Thesis | en |
dc.contributor.supervisor | Chen Tupei | en |
dc.contributor.school | School of Electrical and Electronic Engineering | en |
dc.description.degree | DOCTOR OF PHILOSOPHY (EEE) | en |
dc.identifier.doi | 10.32657/10356/3384 | en |
item.fulltext | With Fulltext | - |
item.grantfulltext | open | - |
Appears in Collections: | EEE Theses |
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File | Description | Size | Format | |
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EEE-THESES_1251.pdf | 17.02 MB | Adobe PDF | View/Open |
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