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|Title:||Device "S" leakage failure due to plasma damage||Authors:||Tan, Siew Yoon.||Keywords:||DRNTU::Engineering::Electrical and electronic engineering::Microelectronics||Issue Date:||2004||Abstract:||Study of the plasma damage in sub micrometer CMOS devices and investigate the root cause of leakage failure on specific products in the fab. On top of that, several experimental studies were carried out to study the influence of deposition rate as well as sputter rate on the liner thickness.||URI:||http://hdl.handle.net/10356/3385||Rights:||Nanyang Technological University||Fulltext Permission:||restricted||Fulltext Availability:||With Fulltext|
|Appears in Collections:||EEE Theses|
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