Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/3385
Title: Device "S" leakage failure due to plasma damage
Authors: Tan, Siew Yoon.
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
Issue Date: 2004
Abstract: Study of the plasma damage in sub micrometer CMOS devices and investigate the root cause of leakage failure on specific products in the fab. On top of that, several experimental studies were carried out to study the influence of deposition rate as well as sputter rate on the liner thickness.
URI: http://hdl.handle.net/10356/3385
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Theses

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