Please use this identifier to cite or link to this item:
https://hdl.handle.net/10356/3385| Title: | Device "S" leakage failure due to plasma damage | Authors: | Tan, Siew Yoon. | Keywords: | DRNTU::Engineering::Electrical and electronic engineering::Microelectronics | Issue Date: | 2004 | Abstract: | Study of the plasma damage in sub micrometer CMOS devices and investigate the root cause of leakage failure on specific products in the fab. On top of that, several experimental studies were carried out to study the influence of deposition rate as well as sputter rate on the liner thickness. | URI: | http://hdl.handle.net/10356/3385 | Schools: | School of Electrical and Electronic Engineering | Rights: | Nanyang Technological University | Fulltext Permission: | restricted | Fulltext Availability: | With Fulltext |
| Appears in Collections: | EEE Theses |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| EEE-THESES_1252.pdf Restricted Access | 8.25 MB | Adobe PDF | View/Open |
Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.