Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/3393
Title: Process and device characterisation of advanced SOI devices
Authors: Chan, Yeen Tat
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
Issue Date: 2005
Source: Chan, Y. T. (2005). Process and device characterisation of advanced SOI devices. Master’s thesis, Nanyang Technological University, Singapore.
Abstract: The goal of this work is to investigate and develop fabrication technology for quadruple-gate (hereby called Double-gate-all-around) MOSFET and the novel n-gate device. It focuses on the process and device characterization of such advanced SOI devices. Most importantly, the process proposed in this work to fabricate such devices is compatible with standard bulk CMOS manufacturing.
URI: https://hdl.handle.net/10356/3393
DOI: 10.32657/10356/3393
Rights: Nanyang Technological University
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Theses

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