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https://hdl.handle.net/10356/3399| Title: | Properties of amorphous Si-carbon alloy film deposited by FCVA technique | Authors: | Tan, Wee Ming | Keywords: | DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials | Issue Date: | 2003 | Abstract: | Amorphous silicon-carbon alloy (a-Sii-xCx) has attracted much attention not only due to the composition dependent variability of their optical band gap but also because of their important roles as intermediate layer for the growth of diamond film on crystalline silicon and non-diamond substrates. [1] | URI: | http://hdl.handle.net/10356/3399 | Schools: | School of Electrical and Electronic Engineering | Rights: | Nanyang Technological University | Fulltext Permission: | restricted | Fulltext Availability: | With Fulltext |
| Appears in Collections: | EEE Theses |
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|---|---|---|---|---|
| EEE-THESES_1265.pdf Restricted Access | 5.93 MB | Adobe PDF | View/Open |
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