Band structures and optical properties of InGaNAs quantum wells
Ng, Say Tyam
Date of Issue2007
School of Electrical and Electronic Engineering
This thesis presents theoretical studies of electronic band structures and optical properties for compressively strained InGaAsN/GaAs quantum well (QW). We have used a realistic 10-band k.p model for the detailed calculation of band structures and have even studied the QW structure with tensile GaAs/GaAsP/GaAs compounded barrier. Strained conduction band offset ratio (Qc) of InGaAsN/GaAs was proposed. Together with band gap energy (EG) and electron effective mass (m*) based on band-anticrossing (BAC) model, we are able to predict quantum well transition energies that is reasonably close to the reported experimental values. Model-dependent prediction of transition energy (Eeh) and energy separation of conduction subbands were also conducted using additional 8-band and 6-band k.p models, which neglect nitrogen related energy level (EN) and conduction-valence band interaction, respectively.
DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
Nanyang Technological University