Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/3437
Title: Design and fabrication of III-V RF devices for MMIC applications
Authors: Ang, Kian Siong
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Integrated circuits
Issue Date: 1999
Abstract: Submicron AlGaAs/InGaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) grown on GaAs substrate by MBE (Molecular Beam Epitaxy) has been designed, fabricated and characterized in this work.
URI: http://hdl.handle.net/10356/3437
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Theses

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