Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/3437
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dc.contributor.authorAng, Kian Siongen_US
dc.date.accessioned2008-09-17T09:30:11Z
dc.date.available2008-09-17T09:30:11Z
dc.date.copyright1999en_US
dc.date.issued1999
dc.identifier.urihttp://hdl.handle.net/10356/3437
dc.description.abstractSubmicron AlGaAs/InGaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) grown on GaAs substrate by MBE (Molecular Beam Epitaxy) has been designed, fabricated and characterized in this work.en_US
dc.rightsNanyang Technological Universityen_US
dc.subjectDRNTU::Engineering::Electrical and electronic engineering::Integrated circuits
dc.titleDesign and fabrication of III-V RF devices for MMIC applicationsen_US
dc.typeThesisen_US
dc.contributor.supervisorNg, Geok Ingen_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.description.degreeMaster of Engineeringen_US
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