Please use this identifier to cite or link to this item:
Full metadata record
DC FieldValueLanguage
dc.contributor.authorAng, Kian Siongen_US
dc.description.abstractSubmicron AlGaAs/InGaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) grown on GaAs substrate by MBE (Molecular Beam Epitaxy) has been designed, fabricated and characterized in this work.en_US
dc.rightsNanyang Technological Universityen_US
dc.subjectDRNTU::Engineering::Electrical and electronic engineering::Integrated circuits
dc.titleDesign and fabrication of III-V RF devices for MMIC applicationsen_US
dc.contributor.supervisorNg, Geok Ingen_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.description.degreeMaster of Engineeringen_US
item.fulltextWith Fulltext-
Appears in Collections:EEE Theses
Files in This Item:
File Description SizeFormat 
  Restricted Access
20.13 MBAdobe PDFView/Open

Google ScholarTM


Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.