dc.contributor.authorRoy, Arijiten_US
dc.date.accessioned2008-09-17T09:30:48Z
dc.date.accessioned2017-07-23T08:31:06Z
dc.date.available2008-09-17T09:30:48Z
dc.date.available2017-07-23T08:31:06Z
dc.date.copyright2007en_US
dc.date.issued2007
dc.identifier.citationRoy, A. (2007). A study on electromigration by driving force approach for submicron copper interconnect. Doctoral thesis, Nanyang Technological University, Singapore.
dc.identifier.urihttp://hdl.handle.net/10356/3479
dc.description.abstractThe prime interest of this thesis work is to investigate the physics of electromigration failure in submicron Cu interconnections including the effect of surrounding materials. A combined driving force model, including the forces from the stress and temperature gradients is presented. Experiments are conducted and good correlations with model predictions are obtained.en_US
dc.rightsNanyang Technological Universityen_US
dc.subjectDRNTU::Engineering::Electrical and electronic engineering::Integrated circuits
dc.titleA study on electromigration by driving force approach for submicron copper interconnecten_US
dc.typeThesisen_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.contributor.supervisorTan Cher Mingen_US
dc.description.degreeDOCTOR OF PHILOSOPHY (EEE)en_US


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