Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/3502
Title: High-k hafnium oxide based thin films using laser molecular beam epitaxy for gate dielectrics
Authors: Lu, Yuekang
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Integrated circuits
Issue Date: 2006
Source: Lu, Y. (2006). High-k hafnium oxide based thin films using laser molecular beam epitaxy for gate dielectrics. Doctoral thesis, Nanyang Technological University, Singapore.
Abstract: The constant increase in integrated circuit densities predicted by Moore’s law requires the continuous reduction of the CMOS device dimensions such as the gate length, gate oxide thickness, etc. Silicon dioxide (SiO2) has been used as the gate oxide and been aggressively scaled for more than 30 years. Nowadays in the state-of-the-art MOSFET, the gate oxide thickness is reduced to 1.2 nm. However, with the use of such thin SiO2,direct tunneling dominates the dielectric conduction which results in high leakage current and unacceptable power dissipations. In order to maintain the performance improvement trends, there are growing interests in the replacement of SiO2 with a high-k dielectric material.
URI: https://hdl.handle.net/10356/3502
DOI: 10.32657/10356/3502
Rights: Nanyang Technological University
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Theses

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