Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/3514
Title: A 2.45GHz CMOS PA+T/R switch for wireless communication
Authors: Hu, Changhui
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Wireless communication systems
Issue Date: 2006
Source: Hu, C. (2006). A 2.45GHz CMOS PA+T/R switch for wireless communication. Master’s thesis, Nanyang Technological University, Singapore.
Abstract: This thesis describes the design of an RF CMOS Power Amplifier (PA) combined with a T/R switch in a conventional CMOS process. The Power Amplifier is designed for all applications in the ISM (Industry Science and Medical) band, which has a transmit frequency of 2.4~2.4835 GHz and requires a peak output power of 100mW (EIRP). A Class A CMOS PA with T/R switch in a 0.18um thick gate standard CMOS process which can generate 100mW of output power into a 50ohms load is presented in this report. Packaging, PCB and testing issues are also described in this report.
URI: https://hdl.handle.net/10356/3514
DOI: 10.32657/10356/3514
Rights: Nanyang Technological University
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Theses

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