Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/3518
Title: Single-ended broadband silicon carbide MESFET power amplifier
Authors: Almira, Jean
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
Issue Date: 2006
Source: Almira, J. (2006). Single-ended broadband silicon carbide MESFET power amplifier. Master’s thesis, Nanyang Technological University, Singapore.
Abstract: Single-ended broadband amplifier was designed using Silicon Carbide MESFET. Taking into account, the device internal properties of wide-bandgap and high impedances. It makes single-ended broadband amplifier realizable by using simple matching networks.
URI: https://hdl.handle.net/10356/3518
DOI: 10.32657/10356/3518
Rights: Nanyang Technological University
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Theses

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