Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/3518
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dc.contributor.authorAlmira, Jeanen
dc.date.accessioned2008-09-17T09:31:31Zen
dc.date.available2008-09-17T09:31:31Zen
dc.date.copyright2006en
dc.date.issued2006en
dc.identifier.citationAlmira, J. (2006). Single-ended broadband silicon carbide MESFET power amplifier. Master’s thesis, Nanyang Technological University, Singapore.en
dc.identifier.urihttps://hdl.handle.net/10356/3518en
dc.description.abstractSingle-ended broadband amplifier was designed using Silicon Carbide MESFET. Taking into account, the device internal properties of wide-bandgap and high impedances. It makes single-ended broadband amplifier realizable by using simple matching networks.en
dc.rightsNanyang Technological Universityen
dc.subjectDRNTU::Engineering::Electrical and electronic engineering::Electronic circuitsen
dc.titleSingle-ended broadband silicon carbide MESFET power amplifieren
dc.typeThesisen
dc.contributor.supervisorShen Zhongxiangen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.description.degreeMASTER OF ENGINEERING (EEE)en
dc.contributor.supervisor2Ruslien
dc.identifier.doi10.32657/10356/3518en
item.grantfulltextopen-
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Appears in Collections:EEE Theses
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