Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/3534
Title: Unified AC charge and DC current modeling for very-deep-submicron CMOS technology
Authors: Chiah, Siau Ben
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
Issue Date: 2007
Source: Chiah, S. B. (2007). Unified AC charge and DC current modeling for very-deep-submicron CMOS technology. Doctoral thesis, Nanyang Technological University, Singapore.
Abstract: A novel approach to formulating unified charge and drain current models for MOSFETs is presented. The charge modeling methodology is based on three regional surface-potential solutions, which describes three operating regions in MOSFETs. The modeling approach is extended to all regions with an explicit single-piece unified compact charge model. This is also to ensure charge-neutrality across different regions of operation especially at the flat-band condition. The charge modeling approach requires no modification in formulation to include coupled polycrystalline silicon and quantum-mechanical effects for all regions. The approach has been shown to have the potential to be extended to non-conventional bulk-Si MOSFETs structure such as in strain-Si or hetero-structure MOSFETs.
URI: https://hdl.handle.net/10356/3534
DOI: 10.32657/10356/3534
Rights: Nanyang Technological University
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Theses

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