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https://hdl.handle.net/10356/3535| Title: | Effects of copper diffusion on the performance of MOS devices | Authors: | Tee, Kheng Chok. | Keywords: | DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials | Issue Date: | 2000 | Abstract: | Results are presented on the stress studies in various diffusion barriers used in Al and Cu metallizations for MOS devices. Results are also presented on the effect of deliberate Cu contamination on the performance of MOS devices. | URI: | http://hdl.handle.net/10356/3535 | Schools: | School of Electrical and Electronic Engineering | Rights: | Nanyang Technological University | Fulltext Permission: | restricted | Fulltext Availability: | With Fulltext |
| Appears in Collections: | EEE Theses |
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| File | Description | Size | Format | |
|---|---|---|---|---|
| EEE-THESES_1388.pdf Restricted Access | 14.04 MB | Adobe PDF | View/Open |
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