Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/3535
Title: Effects of copper diffusion on the performance of MOS devices
Authors: Tee, Kheng Chok.
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
Issue Date: 2000
Abstract: Results are presented on the stress studies in various diffusion barriers used in Al and Cu metallizations for MOS devices. Results are also presented on the effect of deliberate Cu contamination on the performance of MOS devices.
URI: http://hdl.handle.net/10356/3535
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Theses

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