Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/3538
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dc.contributor.authorRanjan Rakeshen
dc.date.accessioned2008-09-17T09:31:51Zen
dc.date.available2008-09-17T09:31:51Zen
dc.date.copyright2007en
dc.date.issued2007en
dc.identifier.urihttps://hdl.handle.net/10356/3538en
dc.description.abstractThe failure mechanisms in HfO2 high-k/polycrystalline-silicon (poly-Si) and HfO2 high-k/TaN/TiN gate stack n/p-metal-oxide-semiconductor field effect transistors (MOSFETs) under inversion and accumulation mode constant voltage stress have been studied both electrically and physically with the aid of high resolution transmission electron microscopy (HRTEM), energy dispersive spectrometry (EDS) and electron energy loss spectrometry (EELS) and EELS elemental dot mapping. Silicon oxynitride (SiOxNy)/poly-Si, silicon nitride (Si3N4) semi-high-k/poly-Si gate stack MOSFETs have also been studied for comparison. The associated dielectric degradation has been correlated with the microstructural changes during breakdown event to understand the actual failure mechanisms. It is found that the breakdown phenomenon and the fundamental failure mechanisms responsible for breakdown in HfO2 high-k gate stacks are significantly different from that of SiOxNy and Si3N4 gate stack MOSFETs. Several new failure mechanisms/defects have been observed in HfO2 high-k/poly-Si and HfO2 high-k/TaN/TiN gate stack n/pMOSFETs.en
dc.rightsNanyang Technological Universityen
dc.subjectDRNTU::Engineering::Electrical and electronic engineering::Electronic circuitsen
dc.titleFailure mechanisms in HfO2 high-k gate stack MOSFETsen
dc.typeThesisen
dc.contributor.supervisorPey Kin Leongen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.description.degreeDOCTOR OF PHILOSOPHY (EEE)en
dc.identifier.doi10.32657/10356/3538en
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