Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/3543
Title: 0.18 um DRAM product electrical failure analysis for prediction of physical defects
Authors: Tej Bahadur Megh Raj.
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Power electronics
Issue Date: 2004
Abstract: Predict possible types of physical defects from electrical failure analysis using the Micromate tester on 0.18 nm technology chips. The results are still applicable to other types of Dynamic Random Access Memory (DRAM).
URI: http://hdl.handle.net/10356/3543
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Theses

Files in This Item:
File Description SizeFormat 
EEE-THESES_1395.pdf
  Restricted Access
14.27 MBAdobe PDFView/Open

Page view(s) 1

1,396
Updated on Apr 10, 2021

Download(s) 50

20
Updated on Apr 10, 2021

Google ScholarTM

Check

Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.