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Title: 0.18 um DRAM product electrical failure analysis for prediction of physical defects
Authors: Tej Bahadur Megh Raj.
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Power electronics
Issue Date: 2004
Abstract: Predict possible types of physical defects from electrical failure analysis using the Micromate tester on 0.18 nm technology chips. The results are still applicable to other types of Dynamic Random Access Memory (DRAM).
Schools: School of Electrical and Electronic Engineering 
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Theses

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