Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/3568
Title: Experimental study of copper contamination in VLSI technology
Authors: Tey, Shih Hwee.
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Electric apparatus and materials
Issue Date: 2003
Abstract: This thesis records the details of two investigations that were performed. The first investigation, believed to be the first of its kind, was on the study of the feasibility of using second harmonic microscopy (SHM) to measure copper concentration and possible diffusion mechanisms at the surfaces and interfaces of microelectronic interconnect structures. The second investigation was on the impact of intentional copper contamination on the performance of semiconductor devices. Copper contamination, both from backside and frontside of wafers were studied
URI: http://hdl.handle.net/10356/3568
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Theses

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