Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/35952
Title: Study of electromigration-induced voiding mechanisms in Cu interconnects
Authors: Anand Vishwanath Vairagar
Keywords: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects
Issue Date: 2006
Source: Anand Vishwanath Vairagar. (2006). Study of electromigration-induced voiding mechanisms in Cu interconnects. Doctoral thesis, Nanyang Technological University, Singapore.
Abstract: Electromigration has been a very active research topic ever since it was first discovered to be the failure mechanism in integrated circuit (IC) interconnects and has attracted interest of numerous researchers so far, especially due to its direct technological implications. With the advent of new Cu/low-k interconnects and aggressive technology scaling, electromigration has become a major reliability concern for IC interconnects. The subject of the present research is the study of electromigration in Cu dual-damascene interconnects. The objectives of this research are to investigate electromigration behavior of dual-damascene Cu interconnects, identify key electromigration issues and develop in-depth understanding of the electromigration-induced voiding mechanism in Cu dual-damascene interconnects
Description: 150 p.
URI: https://hdl.handle.net/10356/35952
DOI: 10.32657/10356/35952
Fulltext Permission: open
Fulltext Availability: With Fulltext
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