Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/35953
Title: Strain relaxation in SiGe/Si heteroepitaxy
Authors: Wong, Lydia Helena
Keywords: DRNTU::Engineering::Materials::Photonics and optoelectronics materials
Issue Date: 2007
Source: Wong, L. H. (2007). Strain relaxation in SiGe/Si heteroepitaxy. Doctoral thesis, Nanyang Technological University, Singapore.
Abstract: Heteroepitaxy of lattice-mismatched materials are important for both optoelectronic and microelectronic applications. Within the community of research in heteroepitaxy, the long-standing goal is to obtain strain relaxation while minimizing the generation of defects which often leads to device degradation.
Description: 163 p.
URI: https://hdl.handle.net/10356/35953
DOI: 10.32657/10356/35953
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:MSE Theses

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