Please use this identifier to cite or link to this item:
|Title:||Strain relaxation in SiGe/Si heteroepitaxy||Authors:||Wong, Lydia Helena||Keywords:||DRNTU::Engineering::Materials::Photonics and optoelectronics materials||Issue Date:||2007||Source:||Wong, L. H. (2007). Strain relaxation in SiGe/Si heteroepitaxy. Doctoral thesis, Nanyang Technological University, Singapore.||Abstract:||Heteroepitaxy of lattice-mismatched materials are important for both optoelectronic and microelectronic applications. Within the community of research in heteroepitaxy, the long-standing goal is to obtain strain relaxation while minimizing the generation of defects which often leads to device degradation.||Description:||163 p.||URI:||https://hdl.handle.net/10356/35953||DOI:||10.32657/10356/35953||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
|Appears in Collections:||MSE Theses|
Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.