Strain relaxation in SiGe/Si heteroepitaxy.
Wong, Lydia Helena.
Date of Issue2007
School of Materials Science and Engineering
Heteroepitaxy of lattice-mismatched materials are important for both optoelectronic and microelectronic applications. Within the community of research in heteroepitaxy, the long-standing goal is to obtain strain relaxation while minimizing the generation of defects which often leads to device degradation.
DRNTU::Engineering::Materials::Photonics and optoelectronics materials