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https://hdl.handle.net/10356/35953| Title: | Strain relaxation in SiGe/Si heteroepitaxy | Authors: | Wong, Lydia Helena | Keywords: | DRNTU::Engineering::Materials::Photonics and optoelectronics materials | Issue Date: | 2007 | Source: | Wong, L. H. (2007). Strain relaxation in SiGe/Si heteroepitaxy. Doctoral thesis, Nanyang Technological University, Singapore. | Abstract: | Heteroepitaxy of lattice-mismatched materials are important for both optoelectronic and microelectronic applications. Within the community of research in heteroepitaxy, the long-standing goal is to obtain strain relaxation while minimizing the generation of defects which often leads to device degradation. | Description: | 163 p. | URI: | https://hdl.handle.net/10356/35953 | DOI: | 10.32657/10356/35953 | Schools: | School of Materials Science & Engineering | Fulltext Permission: | open | Fulltext Availability: | With Fulltext |
| Appears in Collections: | MSE Theses |
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| File | Description | Size | Format | |
|---|---|---|---|---|
| MSE_THESES_10.pdf | 18.2 MB | Adobe PDF |  View/Open |
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